How to report and benchmark emerging field-effect transistors

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing performance has challenging due to the involvement interlinking of multiple parameters. More importantly, interdisciplinarity this research community results a lack consistent benchmarking guidelines. Here we report consensus among authors regarding guidelines important FET parameters metrics. We provide an example process two-dimensional (2D) semiconductor FET. Our will help promote improved approach assessing emerging FETs, thus aiding field progress more consistently meaningfully.